Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC

Physical Review Letters

Volumn 86, Issue 5, 2001, Pages 826-829

  Rohmfeld, S ^a   Hundhausen, M ^a   Ley, L ^a   Schulze, N ^a   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; ISOTOPES; PHONONS; RAMAN SCATTERING;

ELASTIC SCATTERING THEORY;

SILICON CARBIDE;

EID: 0035132494     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.826     Document Type: Article

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