Analysis of thermal-treatment-induced dislocation bundles in GaAs wafers by means of X-ray transmission topography and complementary methods

Journal of Applied Crystallography

Volumn 34, Issue 1, 2001, Pages 65-75

  Mock P ^a,b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; GROWTH RATE; STRUCTURE ANALYSIS; SYNCHROTRON; TEMPERATURE DEPENDENCE; TOPOGRAPHY; X RAY CRYSTALLOGRAPHY;

EID: 0035128345     PISSN: 00218898     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0021889800016083     Document Type: Article

References (8)

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2. (Proceedings of the International Summer Course on Material Science, Antwerp, Belgium, 28 July to 8 August 1969.)
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7. Yamada, M., Fukuzawa, K. & Ito, K. (1997). Inst. Phys. Conf. Ser. No. 155, 901-904.
8. Yonenaga, I. & Sumino, K. (1993). J. Cryst. Growth, 126, 19-29.