Extremely large differential gain of 1.26 μm GaInNAsSb-SQW ridge lasers

Electronics Letters

Volumn 37, Issue 1, 2001, Pages 28-30

  Shimizu, H ^a   Kumada, K ^a   Uchiyama, S ^a   Kasukawa, A ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CRYSTALLINE MATERIALS; GAIN CONTROL; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

HIGH SPEED LASERS; SINGLE QUANTUM WELL (SQW) RIDGE LASERS;

QUANTUM WELL LASERS;

EID: 0035128257     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010021     Document Type: Article

References (8)

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2. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M.C., and UOMI, K.: '1.3μm continuous-wave lasing operation in GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, pp. 487-488
3. SATO, S., and SATOH, S.: 'Room-temperature continuous-wave operation of 1.24μm GaInNAs lasers grown by metal-organic chemical vapor deposition', IEEE J. Sel. Top. Quantum Electron., 1999, 5, pp. 707-710
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7. KAGEYAMA, T., MIYAMOTO, T., MAKINO, S., NISHIYAMA, N., KOYAMA, F., and IGA, K.: 'High-temperature operation up to 170°C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy', IEEE Photonics Technol. Lett., 2000, 12, pp. 10-12
8. YANG, X., JURKOVIC, M.J., HEROUX, J.B., and WANG, W.I.: 'Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant', Electron. Lett., 1999, 35, pp. 1082-1083