Study of interface formation on the cleavage surfaces of A3B6 layered semiconductors

Journal of Physics D: Applied Physics

Volumn 34, Issue 1, 2001, Pages 18-24

  Galiy, P V ^a   Nenchuk, T M ^a   Stakhira, J M ^a  

^a IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBON MONOXIDE; CRYSTALS; GAS ADSORPTION; INTERFACES (MATERIALS); MASS SPECTROMETRY; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; REACTION KINETICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THALLIUM COMPOUNDS;

ELECTRON-ENERGY SPECTRA; SEMICONDUCTOR CRYSTALS;

SEMICONDUCTOR MATERIALS;

EID: 0035121323     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/1/304     Document Type: Article

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