Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 129-134

  Alderighi, D ^a,b   Vinattieri, A ^a,b   Bogani, F ^a,c   Colocci, M ^a,b   Gottardo, S ^b   Grandjean, N ^d   Massies, J ^d  

^a INFM   (Italy)

^b UNIVERSITY OF FLORENCE   (Italy)

^c Dipartimento di Energetica   (Italy)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; GALLIUM NITRIDE; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS;

ALUMINUM GALLIUM NITRIDE; OPTICAL MIGRATION EFFECTS; PHONON REPLICA DYNAMICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035119977     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<129::AID-PSSA129>3.0.CO;2-T     Document Type: Article

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