Investigation of the structure of 2H-AlN films on Si(001) substrates

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 783-786

  Jinschek, J ^a   Kaiser, U ^a   Lebedev, V ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; CRYSTALLOGRAPHY; FILM GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DOMAIN FILM STRUCTURE; OFF-AXIS SUBSTRATE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

ALUMINUM NITRIDE;

EID: 0035119744     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.783     Document Type: Article

References (4)

1. G.A. Jeffrey, G.S. Parry, J.Chem.Phys. Vol. 23 (1953), p. 406.
2. S. Strite, H. Morkoc, J.Vac.Sci.Technol.B Vol. 10 (1992), p. 1237.
3. V. Lebedev, J. Jinschek, U. Kaiser, B. Schröter, W. Richter, Appl.Phys.Let. Vol. 76 (2000), p. 2029.
4. V. Lebedev, J. Jinschek, J. Kräußlich, U. Kaiser, B. Schröter, W. Richter, J.Crystal Growth, submitted.