Interference enhanced Raman scattering of hydrogenated amorphous silicon revisited

Journal of Raman Spectroscopy

Volumn 32, Issue 1, 2001, Pages 23-25

  Gupta, S ^a   Morell, G ^a   Katiyar, R S ^a   Abelson, J R ^b   Jin, H C ^b   Balberg, I ^c  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b University of Illinois at Urbana Champaign   (United States)

^c HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; HYDROGENATION; METALLIC FILMS; RAMAN SCATTERING;

A-SI:H; DEVICE QUALITY; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; INTENSITY ENHANCEMENT EFFECT; INTENSITY GAIN; INTERFERENCE ENHANCED RAMAN SCATTERINGS; SCATTERED INTENSITY; SCATTERING TECHNIQUES; SPECTRA'S; STRUCTURAL CHARACTERIZATION;

AMORPHOUS SILICON;

ALLOY; METAL; SILICON DIOXIDE;

ARTICLE; DEVICE; HYDROGENATION; RAMAN SPECTROMETRY; SEMICONDUCTOR; SPECTRAL SENSITIVITY;

EID: 0035110235     PISSN: 03770486     EISSN: None     Source Type: Journal    
DOI: 10.1002/1097-4555(200101)32:1<23::AID-JRS661>3.0.CO;2-W     Document Type: Article

References (8)