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Volumn 39, Issue 1, 2001, Pages 154-158

High-speed lightwave communication ICs based on III-V compound semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

ERROR CORRECTION; SEMICONDUCTOR MATERIALS; TELECOMMUNICATION SYSTEMS; TIME DIVISION MULTIPLEXING; WAVELENGTH DIVISION MULTIPLEXING;

EID: 0035107802     PISSN: 01636804     EISSN: None     Source Type: Journal    
DOI: 10.1109/35.894390     Document Type: Article
Times cited : (5)

References (13)
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    • Miyamoto, Y.1
  • 3
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    • An analytical delay expression for source-coupled FET logic (SCFL) inverters
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    • Sano, E.1    Murata, K.2
  • 4
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    • Device figure-of-merits for high-speed digital ICs and baseband amplifiers
    • E. Sano, Y. Matsuoka, and T. Ishibashi, "Device Figure-of-merits for High-speed Digital ICs and Baseband Amplifiers," IEICE Trans. Elect., vol. E78-C, no. 9, 1995, pp. 1182-88.
    • (1995) IEICE Trans. Elect. , vol.E78-C , Issue.9 , pp. 1182-1188
    • Sano, E.1    Matsuoka, Y.2    Ishibashi, T.3
  • 5
    • 3042647066 scopus 로고    scopus 로고
    • Ultrahigh-speed integrated circuits using InP-based HEMTs
    • T. Enoki et al., "Ultrahigh-speed Integrated Circuits Using InP-based HEMTs," Jpn. J. Appl. Phys., vol. 37, no. 3B, 1998, pp. 1359-64.
    • (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 1359-1364
    • Enoki, T.1
  • 6
    • 0342287833 scopus 로고    scopus 로고
    • Reliable carbon-doped InP/lnGaAs HBTs technology for low-power 40-GHz static frequency divider
    • Tokyo, Japan, Sept
    • S. Yamahata et al., "Reliable Carbon-Doped InP/lnGaAs HBTs Technology for Low-Power 40-GHz Static Frequency Divider," Intl. Conf. Solid State Dev. and Materials, Tokyo, Japan, Sept. 1999, pp. 570-71.
    • (1999) Intl. Conf. Solid State Dev. and Materials , pp. 570-571
    • Yamahata, S.1
  • 7
    • 0028710983 scopus 로고
    • A 16-dB DC-to-50-GHz InAIAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique
    • Philadelphia, PA, Oct
    • S. Kimura et al., "A 16-dB DC-to-50-GHz InAIAs/InGaAs HEMT Distributed Baseband Amplifier Using a New Loss Compensation Technique," GaAs IC Symp., Philadelphia, PA, Oct. 1994, pp. 96-99.
    • (1994) GaAs IC Symp. , pp. 96-99
    • Kimura, S.1
  • 8
    • 0028714060 scopus 로고
    • A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19 Gb/s decision circuit using 0.2 mm GaAs MESFET
    • Philadelphia, PA, Oct
    • K. Murata et al., "A Novel High-Speed Latching Operation Flip-Flop (HLO-FF) Circuit and its Application to a 19 Gb/s Decision Circuit Using 0.2 mm GaAs MESFET," GaAs IC Symp., Philadelphia, PA, Oct. 1994, pp. 193-96.
    • (1994) GaAs IC Symp. , pp. 193-196
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  • 9
    • 0030405059 scopus 로고    scopus 로고
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    • Orlando, FL, Nov
    • T. Otsuji et al., "A Super-Dynamic Flip-Flop Circuit for Broadband Applications Up to 24 Gb/s Utilizing Production-Level 0.2 mm GaAs MESFET," GaAs IC Symp., Orlando, FL, Nov. 1996, pp. 145-48.
    • (1996) GaAs IC Symp. , pp. 145-148
    • Otsuji, T.1
  • 10
    • 0031378968 scopus 로고    scopus 로고
    • An 80-Gb/s multiplexer IC using InAIAs/InGaAs/InP HEMTs
    • Anaheim, CA, Oct
    • T. Otsuji et al., "An 80-Gb/s Multiplexer IC Using InAIAs/InGaAs/InP HEMTs," GaAs IC Symp., Anaheim, CA, Oct. 1997, pp. 183-86.
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  • 11
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    • 0-90 GHz InAIAs/InGaAs/InP HEMT distributed baseband amplifier IC
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  • 12
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    • Madrid, Spain, Sept. PD paper
    • Y. Miyamoto et al., "1.04-Tb/s DWDM Transmission Experiment Based on Alternate-Polarization 80-Gb/s OTDM Signals," ECOC '98, Madrid, Spain, Sept. 1998, PD paper, pp. 55-56.
    • (1998) ECOC '98 , pp. 55-56
    • Miyamoto, Y.1
  • 13
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    • Baltimore, MD, Mar. PD26
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.