In situ physical vapor deposition of ionized Ti and TiN thin films using hollow cathode magnetron plasma source

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 244-249

  D'Couto, G C ^a   Tkach, G ^a   Ashtiani, K A ^a   Hartsough, L ^a   Kim, E ^a   Mulpuri, R ^a   Lee, D B ^a   Levy, K ^a   Fissel, M ^a   Choi, S ^b   Choi, S M ^b   Lee, H D ^b   Kang, H K ^b  

^a NOVELLUS SYSTEMS INC   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; IN SITU PROCESSING; MAGNETRON SPUTTERING; METALLIZING; PHYSICAL VAPOR DEPOSITION; PLASMA SOURCES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TITANIUM; TITANIUM NITRIDE;

CATHODE MAGNETRON PLASMA SOURCES; CONTACT RESISTANCE; HIGH DENSITY PLASMA; HIGH FRACTIONAL IONIZATION;

THIN FILMS;

EID: 0035083774     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1339012     Document Type: Article

References (12)

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