Effects of contact barriers on Si-substrated GaN photodetectors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 286-289

  Zhao, Z M ^a   Jiang, R L ^a   Chen, P ^a   Xi, D J ^a   Shen, B ^a   Zhang, R ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; OHMIC CONTACTS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

CONTACT BARRIERS;

PHOTODETECTORS;

EID: 0035078324     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1333078     Document Type: Article

References (16)