Relation between electron-spin-resonance and constant-photocurrent-method defect densities in hydrogenated amorphous silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 54-58

  Shimizu, T ^a   Shimada, M ^a   Sugiyama, H ^a   Kumeda, M ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

Constant photocurrent method; Dangling bond; Electron spin resonance; Hydrogenated amorphous silicon; Light soaking

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; HYDROGENATION; PHOTOCURRENTS; THIN FILMS;

CONSTANT PHOTOCURRENT METHOD; DANGLING BOND;

AMORPHOUS SILICON;

EID: 0035066375     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.54     Document Type: Article

References (13)