Millimeter-wave characteristics of SiGe heterojunction bipolar transistors and monolithic interconnects in silicon technologies

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 454, Issue , 2001, Pages 274-275

  Zhang, Jiaming ^a   Jackson, Michael K ^a   Long, John R ^b   Sadr, Saman ^b  

^a ECE Dept   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTROOPTICAL DEVICES; FOURIER TRANSFORMS; MICROPROCESSOR CHIPS; MICROSTRIP DEVICES; OPTICAL WAVEGUIDES; PERMITTIVITY; RESONANCE; SEMICONDUCTING SILICON COMPOUNDS;

VECTOR NETWORK ANALYZERS (VNA);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035063031     PISSN: 01936530     EISSN: None     Source Type: Journal    
DOI: 10.1109/ISSCC.2001.912635     Document Type: Article

References (1)

1. Measurement of high-speed signals