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Solid State Sciences

Volumn 3, Issue 3, 2001, Pages 267-274

Influence of the sulfur vacancies on the electronic properties of In16Sn4S32

(5) Dedryvere R a Lippens, P E a Jumas, J C a Lefebvre Devos, I b Perez Vicente C c

a UNIVERSITÉ DE MONTPELLIER (France)

b INSTITUT D ELECTRONIQUE (France)

c UNIVERSITY OF CÓRDOBA (Spain)

Author keywords

Indium tin sulfide; M ssbauer; Tight binding

Indexed keywords

INDIUM; LITHIUM; STRONTIUM; SULFUR;

ARTICLE; ATOM; CALCULATION; ELECTRONICS; NEUTRON; OXIDATION; SPECTROSCOPY; TEMPERATURE DEPENDENCE; X RAY DIFFRACTION;

EID: 0035061734 PISSN: 12932558 EISSN: None Source Type: Journal
DOI: 10.1016/S1293-2558(00)01137-7 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.