A capacitive fingerprint sensor with low-temperature poly-Si TFTs

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 452, Issue , 2001, Pages 250-251

  Hashido, R ^a   Suzuki, A ^a   Iwata, A ^a   Ogawa, T ^a   Okamoto, T ^a   Satoh, Y ^a   Inoue, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; CMOS INTEGRATED CIRCUITS; COST EFFECTIVENESS; POLYSILICON; SIGNAL TO NOISE RATIO; SUBSTRATES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

CAPACITIVE FINGERPRINT SENSORS; DRAIN CURRENTS; SENSOR PIXELS;

SILICON SENSORS;

EID: 0035054716     PISSN: 01936530     EISSN: None     Source Type: Journal    
DOI: 10.1109/ISSCC.2001.912625     Document Type: Article

References (3)

1. A robust, 1.8V 250μW direct-contact 500dpi fingerprint sensor
2. Intelligent CMOS fingerprint sensors
3. Novel fingerprint scanning arrays using polysilicon TFT's on glass and polymer substrates