Formation and electrical transport properties of nickel silicide synthesized by metal vapor vacuum arc ion implantation

Materials Research Society Symposium - Proceedings

Volumn 611, Issue , 2001, Pages

  Zhang, X W ^a   Wong, S P ^a   Cheung, W Y ^a   Zhang, F ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HALL EFFECT; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION;

METAL VAPOR VACUUM ARC (MEVVA) ION IMPLANTATION;

NICKEL COMPOUNDS;

EID: 0035036862     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)