The temperature dependence of dark conductivity in hydrogenated amorphous SiNx films

Turkish Journal of Physics

Volumn 25, Issue 3, 2001, Pages 223-227

  Tolunay, H ^a   Ay, I ^a  

^a HACETTEPE UNIVERSITY   (Turkey)

Author keywords

Activation energy; Dark Conductivity; Hydrogenated amorphous silicon nitride; Pre exponential factor

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRONS; FILM GROWTH; NITROGEN; PLASMAS; SILICON NITRIDE; THERMAL EFFECTS; THIN FILMS;

CONVENTIONAL PLASMA DEPOSITION;

AMORPHOUS FILMS;

EID: 0035031990     PISSN: 13000101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)