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Volumn 33, Issue 1-4, 2001, Pages 27-37

Microstructure and electrical properties of epitaxial SrBi2Nb2O9 and SrBi2Ta2O9 films

(8) Zurbuchen, Mark A a,b Lettieri, James a Streiffer, Stephen K c Jia, Yunfa a,d Hawley, Marilyn E f Pan, Xiaoqing e Carim, Altaf H a Schlom, Darrell G a,b

a PENNSYLVANIA STATE UNIVERSITY (United States)

b UNIVERSITY OF AUGSBURG (Germany)

c ARGONNE NATIONAL LABORATORY (United States)

d QINGDAO UNIVERSITY (China)

e UNIVERSITY OF MICHIGAN (United States)

f LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

Epitaxial growth; Microstructure of SrBi2Nb2O9; Microstructure of SrBi2Ta2O9; Out of phase boundaries (OPBs); SrBi2 Ta2O9; SrBi2Nb2O9; Transmission electron microscopy (TEM)

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC PROPERTIES; ELECTROMAGNETIC WAVE POLARIZATION; EPITAXIAL GROWTH; PULSED LASER DEPOSITION; REMANENCE; STRONTIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

REMANENT POLARIZATION; SECOND PHASE INCLUSIONS; STRONTIUM BISMUTH NIOBIUM OXIDE; STRONTIUM BISMUTH TANTALUM OXIDE;

FERROELECTRIC THIN FILMS;

EID: 0035031668 PISSN: 10584587 EISSN: None Source Type: Journal
DOI: 10.1080/10584580108222285 Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.