A moving boundary diffusion model for PIN diodes

IEEE Transactions on Magnetics

Volumn 37, Issue 1 I, 2001, Pages 406-410

  Zhang, H ^a   Pappas, J A ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROMAGNETIC LAUNCHERS; MATHEMATICAL MODELS; NONLINEAR EQUATIONS;

NONLINEAR CARRIER DIFFUSION MODEL; NONLINEAR JUNCTION CAPACITOR MODEL; REVERSE RECOVERY PROCESS;

SEMICONDUCTOR DIODES;

EID: 0035030602     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.911865     Document Type: Article

References (11)

1. Simple diode model with reverse recovery
2. High-speed nonlinear circuit models for pn junction diodes
3. Power rectifier and transistors
4. The high current limit for semiconductor junction devices
5. One-dimensional calculation of thyristor forward voltages and holding currents
6. ICAP/4 IsSPICE user's guide
7. ICAP/4 IsSPICE model library listings