Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry

Solid State Phenomena

Volumn 78-79, Issue , 2001, Pages 341-344

  Murakami, Y ^a   Yamauchi, H ^a   Sadoh, T ^a   Kenjo, A ^a   Miyao, M ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Amorphization; Critical dose rate; Ion irradiation; Irradiation defects; Silicon

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; DEFECTS; ELLIPSOMETRY; ION BOMBARDMENT; RELAXATION PROCESSES; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

ARRHENIUS PLOT; CRITICAL DOSE RATE; DOSE RATE DEPENDENCE; ION INDUCED DAMAGE; IRRADIATION DEFECTS; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING SILICON;

EID: 0035008654     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.78-79.341     Document Type: Conference Paper

References (4)

1. The stopping and range of ions in solids