Characterization of defects in 6H-type epitaxially grown silicon carbide wafer by cathodoluminescence microscopy

Solid State Phenomena

Volumn 78-79, Issue , 2001, Pages 377-380

  Isshiki, T ^a   Saijo, H ^a   Nishino, S ^a   Shiojiri, M ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Cathodoluminescence; Micropipe; Planar defect; Silicon carbide; Surface deformation

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; PLASTIC DEFORMATION; SILICON WAFERS; STACKING FAULTS; SURFACE STRUCTURE;

CATHODOLUMINESCENCE MICROSCOPY; INCIDENT ENERGY; LELY METHOD; MICROPIPES; SILICON CARBIDE WAFER;

SILICON CARBIDE;

EID: 0034996423     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.78-79.377     Document Type: Conference Paper

References (4)