Passive Q-switch operation of PbSe-doped glass at 2.1 μm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4350, Issue , 2001, Pages 32-35

  Malyarevich, A M ^a   Savitski, V G ^a   Prokoshin, P V ^a   Yumashev, K V ^a   Lipovskii, A A ^a  

^a BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

Author keywords

Lead Selenide; Q switch; Semiconductor Quantum Dots

Indexed keywords

LEAD COMPOUNDS; LUMINESCENCE; Q SWITCHED LASERS; Q SWITCHING; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

PASSIVE Q-SWITCHING; QUANTUM CONFINEMENT EFFECTS;

SEMICONDUCTING GLASS;

EID: 0034994870     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.420970     Document Type: Conference Paper

References (11)

1. In-vivo investigations on interstitial Ho:YAG laser ablation in urology
2. Laser passive Q-switch operating in a 2 μm region
3. Passive Q-switching of Cr, Tm, Ho:YAG 2.09 μm laser with Cr:CdMnTe solid-state saturable absorber
4. Passive Q-switching of the Tm, Cr:YAG 2 μm laser with a Ho:YLF solid-state saturable absorber
5. PbSe quantum dot doped phosphate glass
6. Anisotropy induced forbidden transitons in PbSe and PbS spherical quantum dots
7. Electronic structure and optical properties of PbS and PbSe quantum dots
8. Phonon broadening and spectral hole burning in very small semiconductor particles
9. Synthesis of monodisperse PbS quantum dots in phosphate glass
10. PbS quantum-dot doped glasses as saturable absorbers for mode-locking of a Cr:forsterite laser