High temperature load-deflection behaviour of reaction bonded SiC (RBSC)

Ceramics International

Volumn 27, Issue 5, 2001, Pages 559-563

  Chakrabarti, O P ^a   Das, P K ^a  

^a CSIR CENTRAL GLASS AND CERAMIC RESEARCH INSTITUTE   (India)

Author keywords

A. Powders; B. Microstructure; D. SiC; Deflection; Load; Reaction bonding

Indexed keywords

CHEMICAL BONDS; HIGH TEMPERATURE EFFECTS; MICROSTRUCTURE; PETROLEUM COKE; SYNTHESIS (CHEMICAL);

LOAD DEFLECTION;

SILICON CARBIDE;

EID: 0034976787     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0272-8842(00)00120-6     Document Type: Article

References (15)

1. The fabrication and properties of self-bonded silicon carbide
2. Influence of grain size, free silicon content and temperature on the strength and toughness of reaction bonded silicon carbide
3. Kinetics and mechanism of high temperature creep in silicon carbide: I. Reaction-bonded
4. Accumulation of creep damage in siliconized silicon carbide
5. Damage-enhanced creep in a siliconized silicon carbide: Phenomenology
6. Damage-enhanced creep in a siliconized silicon carbide: Mechanics of deformation
7. Effect of creep damage on the tensile creep behaviour of a siliconized silicon carbide
8. Effect of microstructure on the creep of siliconized silicon carbide
9. High-temperature compressive strength of reaction-formed silicon carbide (RFSC)
10. Calculation of stresses and strains in four point bending tests
11. Estimation of power-law creep parameters from bend test data
12. High temperature creep testing of ceramics
13. Effects of fabrication parameters in controlling the ultimate properties of reaction bonded silicon carbide (RBSC)
14. The Al-Si (aluminium-silicon) system
15. Deformation and fracture of small silicon crystals