Dynamics of bound excitons in compensated high-resistivity CdTe

Physica B: Condensed Matter

Volumn 302-303, Issue , 2001, Pages 307-311

  Seto, S ^a   Suzuki, K ^b   Adachi, M ^c   Inabe, K ^c  

^a ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

^c KANAZAWA UNIVERSITY   (Japan)

Author keywords

Bound exciton; CdTe; Photoluminescence

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

RASHBA-GURGENISHVILI THEORY;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0034976308     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00445-8     Document Type: Conference Paper

References (15)