Novel technique for hetero-epitaxial diamond film growth on cubic boron nitride from iron carbide at high temperature and high pressure

Applied Physics A: Materials Science and Processing

Volumn 72, Issue 4, 2001, Pages 487-490

  Yin, L W ^a   Li, M S ^a   Liu, Y X ^a   Sun, D S ^a   Li, F Z ^a   Geng, G L ^a   Hao, Z Y ^b  

^a SHANDONG UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CARBIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DECOMPOSITION; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE OPERATIONS; RAMAN SPECTROSCOPY; SYNTHESIS (CHEMICAL);

BORON NITRIDE; IRON CARBIDE; LASER RAMAN SPECTRA;

DIAMOND FILMS;

EID: 0034964977     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100836     Document Type: Article

References (18)