Deep-level defects in semi-insulating LT MBE GaAs

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4413, Issue , 2001, Pages 203-207

  Kozlowski, R ^a   Kaminski P ^a   Kordos P ^b   Pawlowski, M ^c   Cwirko R ^c  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Deep levels; HRPITS; LT MBE GaAs

Indexed keywords

ACTIVATION ENERGY; DEFECTS; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SPECTROSCOPY;

HIGH RESOLUTION PHOTOINDUCED TRANSIENT SPECTROSCOPY (HRPITS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034939435     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.425430     Document Type: Article

References (9)

1. Mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs
2. Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures
3. Native defects in gallium arsenide
4. Deep levels in rapid thermal annealed GaAs
5. Electron traps in bulk and epitaxial GaAs crystals
6. Hole traps in bulk and epitaxial GaAs crystals
7. Electronic structure of neutral and charged vacancies in GaAs
8. Electronic structure and electron-paramagnetic-resonance properties of intrinsic defects in GaAs
9. Photocurrent study of molecular beam epitaxy GaAs grown at low temperature