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Computational Materials Science

Volumn 21, Issue 1, 2001, Pages 79-85

Model of oxide scale growth on Si3N4 ceramics: Nitrogen diffusion through oxide scale and pore formation

(6) Galanov, B A a Ivanov, S M a Kartuzov, E V a Kartuzov, V V a Nickel, K G b Gogotsi, Y G c,d

a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE (Ukraine)

b UNIVERSITY OF TÜBINGEN (Germany)

c University of Illinois at Chicago (United States)

d Drexel University (United States)

Author keywords

Diffusion; Kinetics; Oxidation; Oxide scale; Silicon oxide

Indexed keywords

CERAMIC MATERIALS; DIFFERENTIAL EQUATIONS; DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; OXIDATION; REACTION KINETICS;

OXIDATION KINETICS; OXIDE SCALE GROWTH;

SILICON NITRIDE;

EID: 0034911890 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0256(00)00217-2 Document Type: Article

Times cited : (11)

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