Ways of providing radiation resistance of magnetic field semiconductor sensors

Radiation Physics and Chemistry

Volumn 61, Issue 3-6, 2001, Pages 743-745

  Bolshakova, I A ^a   Krukovskii, S ^a   Holyaka, R ^a   Matkovskii, A ^a   Moroz, A ^a  

^a LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Hall generator; Magnetic measuring system; Radiation resistance

Indexed keywords

CRYSTALS; DOPING (ADDITIVES); IONIZING RADIATION; MAGNETIC FIELD EFFECTS; MAGNETIC FIELD MEASUREMENT; NEUTRON IRRADIATION; PARTICLE ACCELERATORS; RARE EARTH ADDITIONS; SENSORS; SOLENOIDS; TRANSDUCERS;

RADIATION RESISTANCE; SEMICONDUCTOR SENSORS;

HALL EFFECT DEVICES;

ACCURACY; ANALYTIC METHOD; CONFERENCE PAPER; CRYSTAL; DOPING; EXPOSURE; GENERATOR; IONIZING RADIATION; IRRADIATION; MAGNETIC FIELD; MEASUREMENT; NEUTRON; RADIOSENSITIVITY; SEMICONDUCTOR; SENSOR; TECHNIQUE; TECHNOLOGY; TRANSDUCER;

EID: 0034902207     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(01)00393-0     Document Type: Article

References (5)

1. Local neutrality conception: Fermi level pinning in defective semiconductors
2. Deep trapping centers in n-type GaAs bombarded with fast neutrons
3. EL2-related studies in irradiated and implanted GaAs
4. Influence of fast-neutron irradiation on the properties of gallium arsenide doped with various impurities
5. Rare-earth elements in III-V semiconductors