Interface bonding for fe thin films on gaas surfaces of differing morphology

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 19, 2001, Pages

  Freeland, J W ^a   Coulthard, I ^a   Antel, W J ^a   Stampfl, A P J ^b  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; IRON;

ABSORPTION; ARTICLE; CHEMICAL BINDING; ELECTRON TRANSPORT; FILM; MAGNETISM; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 0034899515     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.193301     Document Type: Article

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