Interlayer coupling and magnetoresistance of MnGa-based trilayers with semiconducting, antiferromagnetic, and ferrimagnetic spacer layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 18, 2001, Pages

  Van Roy, W ^a,c   Akinaga, H ^a,d   Miyanishi, S ^a,b,e  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c IMEC   (Belgium)

^d ELECTROTECHNICAL LABORATORY   (Japan)

^e SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIAL; GALLIUM; MANGANESE;

ARTICLE; CHEMICAL STRUCTURE; LOW TEMPERATURE; MAGNETISM; MEASUREMENT; MOLECULAR MODEL; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 0034895916     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.184417     Document Type: Article

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