Reduced intermodulation distortion of AlGaAs/InGaAs doped-channel FETs by air-bridge gate process

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 143-146

  Chiu, H C ^a   Chien, F T ^a   Yang, S C ^a   Chan, Y J ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ETCHING; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SIGNAL DISTORTION;

AIR BRIDGE GATE PROCESS; DOPED CHANNEL FIELD EFFECT TRANSISTORS; INTERMODULATION DISTORTION; SECOND MESA ETCH METHOD; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE;

MESFET DEVICES;

EID: 0034876037     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. 0.47As heterostructure FETs
2. 0.8As heterostructures
3. Suppression of gate leakage current in n-AlGaAs/GaAs power HEMTs
4. 0.75As/GaAs power HFETs under off-state and on-state electrical stress conditions
5. Airbridged-gate MESFET's fabricated by isotropic reactive ion etching
6. Large- And small-signal IMD behavior