Isovalent substitution-A perspective method of producing heterojunction optoelectronical devices

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4425, Issue , 2001, Pages 272-276

  Makhniy, V P ^a   Baranjuk, V E ^a   Demich, N V ^a   Melnyk, V V ^a   Malimon, I V ^a   Slyotov, M M ^a   Sobistchanskiy, B M ^a   Stets, E V ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Boundary emission; Diffusion; Heterolayer; Intrinsic dot deffects; Isovalent substitution; Quasichemical reactions; Radiative resistance

Indexed keywords

DIFFUSION; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; IMPURITIES; OPTICAL PROPERTIES; PHOTODIODES;

ISOVALENT SUBSTITUTION;

OPTOELECTRONIC DEVICES;

EID: 0034870756     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.429735     Document Type: Article

References (17)

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2. Semiconductors heterojunctions
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4. Heterojunction productions mechanism at solid phase substitution on II-VI compounds
5. Physics processes in diodes structures based on widegap II-VI semiconductors
6. Physical properties of layers CdSe, obtained by solid phase substitutions
7. Mechanism luminescence in heterolayers solid phase substitutions widegap II-VI compounds
8. Termodinamiks isovalency doping of crystalls semiconductors compounds
9. Physiks II-VI compounds
10. Intrinsic dot defects in layers ZnSe, obtained by method solid phase substitutions
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14. Barrier detectors of electromagnetyk radiation based on widegap II-VI compounds
15. Properties of sistems scintillator-photodiod based on structure zinc selenide-telluride
16. Integral detector of ionizate radiation based of heterojunction sulphide-telluride cadmium
17. Detector of X-rays based on a cadmium sulfide-telluride heterojunction