Nitrogen passivation of the interface states near the conduction band edge in 4H-silicon carbide

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Williams, J R ^a   Chung, G Y ^a   Tin, C C ^a   McDonald, K ^a   Farmer, D ^a   Chanana, R K ^a   Weller, R A ^a   Pantelides, S T ^a   Holland, O W ^a   Das, M K ^a   Lipkin, L A ^a   Feldman, L C ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRONIC DENSITY OF STATES; NITROGEN; PASSIVATION; SILICON CARBIDE;

CONDUCTION BAND EDGE; NITROGEN PASSIVATION;

INTERFACES (MATERIALS);

EID: 0034869615     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)

1. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
2. 3 anneals
3. 2 system