A GaAs HBT 5.8 GHz OFDM transmitter MMIC chip set

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 267-270

  Raghavan, A ^a   Gebara, E ^a   Lee, C H ^a   Chakraborty, S ^a   Mukherjee, D ^a   Bhattacharjee, J ^a   Heo, D ^a   Laskar, J ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTION BIPOLAR TRANSISTORS; INDUCTANCE; MICROELECTRONIC PROCESSING; MIXER CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; VARIABLE FREQUENCY OSCILLATORS;

ON-CHIP MATCHING; RADIO FREQUENCY CHOKE; TRANSMITTER CHIP SET; UPCONVERSION MIXER;

TRANSMITTERS;

EID: 0034869323     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Wireless LAN medium access control (MAC) and physical layer (PHY) specifications: High-speed physical layer in the 5 GHz band
2. OFDM performance in amplifier nonlinearity
3. GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications
4. A 5.8 GHz OFDM GaAs MESFET MMIC chip set
5. Quasilinear amplification using self phase distortion compensation technique