A study of measurement system noise for sensitive soft breakdown triggering

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2001, Pages 99-102

  Schmitz, J ^a   Tuinhout, H P ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ESTIMATION; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; SPURIOUS SIGNAL NOISE;

CONSTANT CURRENT STRESS; CONSTANT VOLTAGE STRESS; MEASUREMENT SYSTEM NOISE;

INTEGRATED CIRCUIT TESTING;

EID: 0034867090     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Quasi-breakdown of ultrathin gate oxides under high field stress
2. Explanation of soft and hard breakdown and its consequences for area scaling
3. Soft breakdown triggers for large area capacitors under constant voltage stress
4. Ultra-thin gate oxides: They break down, but do they fail?
5. J-ramp on sub-3nm dielectrics: Noise as a breakdown criterion
6. Tunneling current noise in thin gate oxides