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Volumn , Issue , 2001, Pages 119-123

Effects of electrical stress on the frequency performance of 0.18 μm technology NMOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC NETWORK ANALYZERS; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); HOT CARRIERS; IMPACT IONIZATION; SCATTERING PARAMETERS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

EID: 0034865467     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (14)
  • 8
    • 0032021673 scopus 로고    scopus 로고
    • Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistors
    • Mar/Apr
    • (1998) J. V. Sci. and Technol, B , vol.16 , Issue.2 , pp. 628
    • Kwan, W.S.1    Deen, M.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.