Bonding of p-Si/N-InP wafers through surface activated bonding method at room temperature

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 272-275

  Howlader, M M R ^a   Watanabe, T ^a   Suga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BONDING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; INTERFACES (MATERIALS); SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE ACTIVATED BONDING (SAB) METHOD;

SILICON WAFERS;

EID: 0034852264     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2001.929110     Document Type: Article

References (6)

1. Structure of Al-Al and Al-Si3N4 interfaces bonded at room temperature by means of the surface activated bonding method
2. 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature
3. Surface activated bonding of silicon wafers at room temperature
4. Wafer direct bonding of compound semiconductors and silicon at room temperature by the turface activated bonding method
5. Effects of heat treatment on bonding properties in InP-Si direct wafer bonding