Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μm

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 440-443

  Reimann, T ^a   Schneider, M ^a   Velling, P ^a   Neumann, S ^a   Agethen, M ^a   Bertenburg, R M ^a   Heinzelmann, R ^a   Stohr A ^a   Jager D ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT AMPLIFIERS; LIGHT MODULATORS; NATURAL FREQUENCIES; OPTICAL WAVEGUIDES; OPTIMIZATION;

ELECTRO-ABSORPTION WAVEGUIDE MODULATORS (EAM);

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0034842149     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Optoelectronic system integration using InP-based HBTs for lightwave communication
2. Growth optimization for p-n junction placement in the integration of heterojunction bipolar transistors and quantum well modulators on InP
3. Application of bipolar transistor structures to optical waveguide modulators and switches
4. Demonstration of the heterostructure field-effect transistor as an optical modulator
5. Optical switches and heterojunction bipolar transistors in InP for monolithic integration
6. Current induced absorption modulation using quantum structures in the collector of heterojunction bipolar transistors
7. High-efficiency fiber-to-chip coupling using low-loss tapered single-mode fiber