Demonstration of a flash memory cell with 55Å EOT silicon nitride tunnel dielectric

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2001, Pages 138-141

  Melik Martirosian, A ^a   Ma, T P ^a   Wang, X W ^a   Guo, X ^a   Widdershoven, F P ^a   Wolters, D R ^a   Van der Wal, V J D ^a   Van Duuren, M J ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON MOBILITY; HOLE MOBILITY; LEAKAGE CURRENTS; NONVOLATILE STORAGE; SILICON NITRIDE; VAPOR DEPOSITION;

EQUIVALENT OXIDE THICKNESS (EOT); JET VAPOR DEPOSITION (JVD); TUNNEL DIELECTRIC;

FLASH MEMORY;

EID: 0034841337     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Extending scaling limit of tunnel oxide by the use of nitride/oxynitride in flash memory devices