Flip chip power MOSFET: A new wafer scale packaging technique

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 251-254

  Arzumanyan, A ^a   Sodhi, R ^a   Kinzer, D ^a   Schofield, H ^a   Sammon, T ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SCALE PACKAGES; ELECTRIC RESISTANCE; FLIP CHIP DEVICES; SCANNING ELECTRON MICROSCOPY; WSI CIRCUITS;

WAFER SCALE PACKAGING;

MOSFET DEVICES;

EID: 0034838162     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Ultra-low Rdson 12V p-channel trench MOSFET
2. High-density ultra-low Rdson 30V n-channel trench FETs for DC/DC converter applications
3. R devices