Highly reliable 40Gb/s electroabsorption modulator grown on InP:Fe substrate

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 54, Issue 1, 2001, Pages

  Takagi, K ^a   Tada, H ^a   Ishimura, E ^a   Aoyagi, T ^a   Nishimura, T ^a   Omura, E ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTROOPTICAL DEVICES; LIGHT ABSORPTION; OPTICAL WAVEGUIDES; RELIABILITY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ELECTROABSORPTION MODULATOR; MULTI QUANTUM WELL MODULATOR; PARASITIC CAPACITANCE;

LIGHT MODULATORS;

EID: 0034835445     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Novel current-blocking structure for high-speed EA-modulator/DFB-LD integrated light source
2. 60GHz band electroabsorption modulator module
3. Ultra-high-speed multiple-quantum-well electro-absorption optical modulators with integrated waveguides
4. Traveling-wave electrode electroabsorption modulator integrated DFB lasers (TW-EADFBs) for over 40-Gb/s transmission
5. High-speed InGaAsP electroabsorption modulators: Dependence of the device characteristics on the mesa design