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Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 219-225

Modification of β-FeSi2 precipitate layers in silicon by hydrogen implantation

(3) Schuller, B a Carius, R a Mantl, S a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; HYDROGEN; ION BEAMS; ION IMPLANTATION; IRON COMPOUNDS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

IRON SILICIDES;

SEMICONDUCTING FILMS;

EID: 0034833213 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(00)00451-2 Document Type: Article

Times cited : (5)

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