High-frequency device-modeling techniques for RF-CMOS circuits

IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences

Volumn E84-A, Issue 2, 2001, Pages 520-528

  Fujimoto, Ryuichi ^a   Watanabe, Osamu ^a   Fujii, Fumie ^a   Kawakita, Hideyuki ^a   Tanimoto, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Device model; Geometric parameter; Model parameter; Process parameter; Scaling

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; ELECTRIC INDUCTORS; MATHEMATICAL MODELS; MOSFET DEVICES; RESISTORS; VARACTORS;

HIGH-FREQUENCY DEVICE-MODELING TECHNIQUES;

CMOS INTEGRATED CIRCUITS;

EID: 0034831821     PISSN: 09168508     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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