Damascene test structures for the evaluation of barrier layer performance against copper diffusion

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 291-296

  Motte, P ^a   Swaanen, M ^b   Torres, J ^c   Gilet, J M ^a   Wyborn, G ^a  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c ORANGE LABS   (France)

Author keywords

Barrier performance test; Copper; CVD TiN; Diffusion barrier; Etch pit; IMP TaN

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; DIFFUSION; ETCHING; TANTALUM COMPOUNDS; THERMAL STRESS; TITANIUM NITRIDE;

DAMASCENE TEST STRUCTURES;

SEMICONDUCTING FILMS;

EID: 0034830451     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00459-7     Document Type: Article

References (2)

1. M.S. Choe, M. Danek, in: Proceedings of IITC, 1999, p. 62.
2. C. Marcadal et al., in: Proceedings VMIC, 1997, p. 405.