CVD and PVD copper integration for dual damascene metallization in a 0.18 μm process

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 269-275

  Proust, M ^a   Judong, F ^a   Gilet, J M ^a   Liauzu, L ^b   Madar, R ^c  

^a STMICROELECTRONICS   (France)

^b ORANGE LABS   (France)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

Copper; CVD Cu; PVD Cu; Reflow

Indexed keywords

COPPER; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHYSICAL VAPOR DEPOSITION;

DUAL DAMASCENE METALLIZATION;

ULSI CIRCUITS;

EID: 0034830450     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00456-1     Document Type: Article

References (5)

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