Mechanism of power dissipation capability of power MOSFET devices: Comparative study between LDMOS and VDMOS transistors

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 275-278

  Chung, Y S ^a   Valenzuela, O ^a   Baird, B ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ENERGY DISSIPATION; HIGH TEMPERATURE EFFECTS; MOS DEVICES;

POWER DISSIPATIONS;

MOSFET DEVICES;

EID: 0034829323     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Thermal failure in semiconductor devices
2. Energy capability of lateral and vertical DMOS...
3. Transient thermal response of power semiconductors to short power pulse
4. Energy capability of power device with thick Cu layer integration
5. Transient thermal simulation of power devices with Cu layer
6. Electrical-thermal coupling mechanism on operating limit of LDMOS transistor