SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 635, Issue , 2001, Pages C571-C576

4-point resistance measurements of individual bi nanowires

(7) Cronin, Stephen B a Lin, Yu Ming b Gai, Pratibha L e Rabin, Oded a Black, Marcie R b Dresselhaus, Gene c Dresselhaus, Mildred S d

a Department of Physics ^* (United States)

b USA (United States)

c MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

d MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

e DUPONT COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; COMMINUTION; ETCHING; ION BEAMS; PRESSURE EFFECTS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

POINT RESISTANCE;

NANOSTRUCTURED MATERIALS;

EID: 0034827816 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-635-c5.7 Document Type: Article

Times cited : (10)

References (9)

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- Cronin, S.¹ Lin, Y.-M.² Koga, T.³ Sun, X.⁴ Ying, J.Y.⁵ Dresselhaus, M.S.⁶

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.