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Volumn 73, Issue 2-3, 2001, Pages 216-220

New type of semiconductor gas sensor based on the n+n combined structure

Author keywords

[No Author keywords available]

Indexed keywords

FEEDBACK CONTROL; SEMICONDUCTOR DEVICES; SENSITIVITY ANALYSIS; THERMODYNAMIC STABILITY;

EID: 0034825568     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00699-7     Document Type: Article
Times cited : (13)

References (14)
  • 1
    • 0025721593 scopus 로고
    • Selectivity studies on tin oxide-based semiconductor gas sensor
    • G.S.V. Coles, G. Williams, Selectivity studies on tin oxide-based semiconductor gas sensor, Sens. Actuators B 3 (1991) 7-14.
    • (1991) Sens. Actuators B , vol.3 , pp. 7-14
    • Coles, G.S.V.1    Williams, G.2
  • 2
    • 0022780450 scopus 로고
    • The role of catalysis in solid-state gas sensors
    • S.J. Gentry, T.A. Jones, The role of catalysis in solid-state gas sensors, Sens. Actuators 10 (1986) 141-163.
    • (1986) Sens. Actuators , vol.10 , pp. 141-163
    • Gentry, S.J.1    Jones, T.A.2
  • 8
    • 0342328871 scopus 로고
    • Selectivity in semiconductor gas sensor
    • S. Roy Morrison, Selectivity in semiconductor gas sensor, Sens. Actuators 14 (1988) 19-25.
    • (1988) Sens. Actuators , vol.14 , pp. 19-25
    • Roy Morrison, S.1
  • 11
    • 85031479082 scopus 로고    scopus 로고
    • United Stated Patent no. 5,298,783, 1994
    • X.-H. Wu, United Stated Patent no. 5,298,783, 1994.
    • Wu, X.-H.1
  • 12
    • 85031477472 scopus 로고    scopus 로고
    • Japan Patent no. 4-213212, 1992
    • X.-H. Wu, Japan Patent no. 4-213212, 1992.
    • Wu, X.-H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.