A new wafer-bonder of ultra-high precision using surface activated bonding (SAB) concept

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2001, Pages 1013-1018

  Suga, T ^a   Howlader, M M R ^a   Itoh, T ^a   Inaka, C ^b   Arai, Y ^b   Yamauchi, A ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b Toray Engineering Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; MICROELECTROMECHANICAL DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

ROOM TEMPERATURE BONDING; SURFACE ACTIVATED BONDING; WAFER BONDING SYSTEM;

ELECTRONICS PACKAGING;

EID: 0034822514     PISSN: 05695503     EISSN: None     Source Type: Journal    
DOI: 10.1109/ECTC.2001.927935     Document Type: Article

References (5)

1. Structure of Al-Al and Al-Si3N4 interfaces bonded at room temperature by means of the surface activated bonding method
2. 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature
3. Surface activated bonding of silicon wafers at room temperature
4. Rigid XYθ table for ultraprecision machine tool driven by means of walking drive
5. The development of a 'walking drive' ultraprecision positioner