Novel 600-V trench high-conductivity IGBT (Trench HiGT) with short-circuit capability

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 417-420

  Oyama, K ^a   Kohno, Y ^a   Sakano, J ^a   Uruno, J ^a   Ishizaka, K ^a   Kawase, D ^a   Mori, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC INVERTERS; ELECTRIC LOSSES; SHORT CIRCUIT CURRENTS; THYRISTORS; VOLTAGE CONTROL;

TURM-OFF LOSSES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034822364     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)