Uncooled, 10Gb/s operation of two-contact InGaAsP lasers with low drive current

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 54, Issue 3, 2001, Pages

  Massara, A B ^a   Yang, S ^a   Houle, T J ^a   Thilakumara, R P ^a   Penty, R V ^a   White, I H ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; ELECTRIC CURRENTS; ETCHING; HIGH TEMPERATURE OPERATIONS; ION BEAMS; LIGHT MODULATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

FOCUSED ION BEAM ETCHING; HIGH SPEED MODULATION; RIDGE WAVEGUIDE LASER; TWO CONTACT LASERS; ULTRA LOW DRIVE CURRENTS;

OPTICAL COMMUNICATION;

EID: 0034821198     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 85°C-10Gbit/s operation of 1.3μm InGaAlAs MQW-DFB laser
2. The 'gain-lever' effect in InGaAsP/InP multiple quantum well lasers
3. Reduced intermodulation-free dynamic range in gain-lever lasers